MOSFETs 30V S08 Dual MOSFET 20V VBR 4.5V Gate
Lead Time: 84 Days
Products specifications
| Maximum Operating Temperature | + 150 C |
| Qg - Gate Charge | 12.9 nC, 12.7 nC |
| Minimum Operating Temperature | - 55 C |
| Vds - Drain-Source Breakdown Voltage | 30 V |
| Number of Channels | 2 Channel |
| Rds On - Drain-Source Resistance | 24 mOhms, 80 mOhms |
| Technology | Si |
| Vgs th - Gate-Source Threshold Voltage | 1 V, 3 V |
| Transistor Polarity | N-Channel, P-Channel |
| Channel Mode | Enhancement |
| Configuration | Dual |
| Vgs - Gate-Source Voltage | 20 V |
| Id - Continuous Drain Current | 7.3 A, 5.3 A |
| Pd - Power Dissipation | 1.25 W |
| Packaging | Cut Tape, MouseReel, Reel |