MOSFETs 60V TRENCH MOSFET 20V VGS P-Channel
Products specifications
| Id - Continuous Drain Current | 3.6 A, 2.6 A |
| Transistor Polarity | N-Channel, P-Channel |
| Rds On - Drain-Source Resistance | 55 mOhms, 125 mOhms |
| Pd - Power Dissipation | 1.25 W |
| Technology | Si |
| Channel Mode | Enhancement |
| Configuration | Dual |
| Vgs - Gate-Source Voltage | 20 V |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Vgs th - Gate-Source Threshold Voltage | 1 V |
| Packaging | Reel |
| Qg - Gate Charge | 20.4 nC, 12.1 nC |
| Vds - Drain-Source Breakdown Voltage | 60 V |
| Number of Channels | 2 Channel |