MOSFET 40V N/P-Channel Enhancement MOSFET
Products specifications
| Number of Channels | 2 Channel |
| Rds On - Drain-Source Resistance | 50 mOhms |
| Pd - Power Dissipation | 2.1 W |
| Channel Mode | Enhancement |
| Transistor Polarity | N-Channel, P-Channel |
| Maximum Operating Temperature | + 150 C |
| Minimum Operating Temperature | - 55 C |
| Vds - Drain-Source Breakdown Voltage | 40 V |
| Configuration | Dual |
| Vgs - Gate-Source Voltage | 20 V |
| Technology | Si |
| Id - Continuous Drain Current | 5.2 A |
| Packaging | Cut Tape, MouseReel, Reel |