MOSFETs Mosfet H-Bridge 100/-100 1.1/-0.9
Lead Time: 84 Days
Products specifications
| Id - Continuous Drain Current | 1 A, 850 mA |
| Vds - Drain-Source Breakdown Voltage | 100 V |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Packaging | Cut Tape, MouseReel, Reel |
| Qg - Gate Charge | 2.9 nC, 3.5 nC |
| Transistor Polarity | N-Channel, P-Channel |
| Vgs th - Gate-Source Threshold Voltage | 2 V |
| Configuration | Quad |
| Channel Mode | Enhancement |
| Rds On - Drain-Source Resistance | 700 mOhms, 1.45 Ohms |
| Pd - Power Dissipation | 870 mW |
| Technology | Si |
| Vgs - Gate-Source Voltage | 20 V |
| Number of Channels | 4 Channel |