MOSFETs Mosfet H-Bridge 60/-60V 1.8/-1.4A
Lead Time: 84 Days
Products specifications
| Number of Channels | 4 Channel |
| Vgs th - Gate-Source Threshold Voltage | 1 V |
| Configuration | Quad |
| Transistor Polarity | N-Channel, P-Channel |
| Vgs - Gate-Source Voltage | 10 V |
| Technology | Si |
| Rds On - Drain-Source Resistance | 250 mOhms, 400 mOhms |
| Maximum Operating Temperature | + 150 C |
| Qg - Gate Charge | 3.2 nC, 5.7 nC |
| Pd - Power Dissipation | 0.87 W |
| Minimum Operating Temperature | - 55 C |
| Channel Mode | Enhancement |
| Vds - Drain-Source Breakdown Voltage | 60 V |
| Packaging | Cut Tape, MouseReel, Reel |
| Id - Continuous Drain Current | 1.8 A, 1.42 A |