MOSFETs 100V 2.1A N-Channel Enhancement MOSFET
Lead Time: 84 Days
Products specifications
| Vds - Drain-Source Breakdown Voltage | 100 V |
| Number of Channels | 2 Channel |
| Vgs - Gate-Source Voltage | 20 V |
| Configuration | Dual |
| Pd - Power Dissipation | 1.8 W |
| Packaging | Cut Tape, MouseReel, Reel |
| Transistor Polarity | N-Channel |
| Id - Continuous Drain Current | 2.1 A |
| Technology | Si |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Rds On - Drain-Source Resistance | 250 mOhms |
| Channel Mode | Enhancement |