MOSFETs N-Chan 100V MOSFET (UMOS)
Lead Time: 84 Days
Products specifications
| Vgs th - Gate-Source Threshold Voltage | 4 V |
| Configuration | Single |
| Rds On - Drain-Source Resistance | 350 mOhms |
| Channel Mode | Enhancement |
| Technology | Si |
| Vds - Drain-Source Breakdown Voltage | 100 V |
| Pd - Power Dissipation | 8.5 W |
| Number of Channels | 1 Channel |
| Id - Continuous Drain Current | 3.5 A |
| Packaging | Cut Tape, MouseReel, Reel |
| Qg - Gate Charge | 5.4 nC |
| Transistor Polarity | N-Channel |
| Vgs - Gate-Source Voltage | 20 V |
| Maximum Operating Temperature | + 150 C |
| Minimum Operating Temperature | - 55 C |