MOSFET ENHANCE MODE MOSFET 150V N-CHANNEL
Products specifications
| Channel Mode | Enhancement |
| Technology | Si |
| Number of Channels | 1 Channel |
| Packaging | Cut Tape, MouseReel, Reel |
| Pd - Power Dissipation | 4.2 W |
| Qg - Gate Charge | 6.6 nC |
| Vgs th - Gate-Source Threshold Voltage | 2.7 V |
| Rds On - Drain-Source Resistance | 650 mOhms |
| Vgs - Gate-Source Voltage | 25 V |
| Maximum Operating Temperature | + 150 C |
| Vds - Drain-Source Breakdown Voltage | 150 V |
| Minimum Operating Temperature | - 55 C |
| Configuration | Single |
| Transistor Polarity | N-Channel |
| Id - Continuous Drain Current | 2.6 A |