MOSFETs ENHANCE MODE MOSFET 200V N-CHANNEL
Lead Time: 112 Days
Products specifications
| Number of Channels | 1 Channel |
| Rds On - Drain-Source Resistance | 750 mOhms |
| Qg - Gate Charge | 8.1 nC |
| Vgs th - Gate-Source Threshold Voltage | 1.6 V |
| Channel Mode | Enhancement |
| Id - Continuous Drain Current | 2.3 A |
| Transistor Polarity | N-Channel |
| Vds - Drain-Source Breakdown Voltage | 200 V |
| Configuration | Single |
| Packaging | Cut Tape, MouseReel, Reel |
| Pd - Power Dissipation | 4.3 W |
| Technology | Si |
| Vgs - Gate-Source Voltage | 20 V |
| Maximum Operating Temperature | + 150 C |
| Minimum Operating Temperature | - 55 C |