MOSFET 20V DUAL N-CH ENH 12V VGS 3.7 IDS
Products specifications
| Vgs th - Gate-Source Threshold Voltage | 700 mV |
| Rds On - Drain-Source Resistance | 85 mOhms, 85 mOhms |
| Configuration | Dual |
| Vgs - Gate-Source Voltage | 12 V |
| Packaging | Cut Tape, MouseReel, Reel |
| Pd - Power Dissipation | 1.5 W |
| Transistor Polarity | N-Channel |
| Id - Continuous Drain Current | 3.7 A |
| Number of Channels | 2 Channel |
| Vds - Drain-Source Breakdown Voltage | 20 V |
| Technology | Si |
| Channel Mode | Enhancement |
| Qg - Gate Charge | 3.1 nC, 3.1 nC |
| Maximum Operating Temperature | + 150 C |
| Minimum Operating Temperature | - 55 C |