MOSFETs 20V N-Channel Enhance. Mode MOSFET
Lead Time: 168 Days
Products specifications
| Id - Continuous Drain Current | 4.9 A |
| Qg - Gate Charge | - |
| Packaging | Cut Tape, MouseReel, Reel |
| Vgs th - Gate-Source Threshold Voltage | 600 mV |
| Rds On - Drain-Source Resistance | 45 mOhms |
| Transistor Polarity | N-Channel |
| Number of Channels | 1 Channel |
| Pd - Power Dissipation | 1.4 W |
| Technology | Si |
| Channel Mode | Enhancement |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Configuration | Single |
| Vgs - Gate-Source Voltage | 12 V |
| Vds - Drain-Source Breakdown Voltage | 20 V |