ZXMN3A01ZTA

MOSFETs 30V N-Ch ENH Mode 120mOhm 10VGS 3.3A
Lead Time: 168 Days

SKU: ZXMN3A01ZTA

Availability: 2710 in stock

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MOSFETs 30V N-Ch ENH Mode 120mOhm 10VGS 3.3A
Lead Time: 168 Days

Products specifications

Vgs th - Gate-Source Threshold Voltage	1 V
Id - Continuous Drain Current	3.3 A
Pd - Power Dissipation	970 mW
Vgs - Gate-Source Voltage	10 V
Technology	Si
Configuration	Single
Number of Channels	1 Channel
Qg - Gate Charge	5 nC
Transistor Polarity	N-Channel
Maximum Operating Temperature	+ 150 C
Minimum Operating Temperature	- 55 C
Channel Mode	Enhancement
Rds On - Drain-Source Resistance	120 mOhms
Vds - Drain-Source Breakdown Voltage	30 V
Packaging	Cut Tape, MouseReel, Reel

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Products specifications

Vgs th - Gate-Source Threshold Voltage	1 V
Id - Continuous Drain Current	3.3 A
Pd - Power Dissipation	970 mW
Vgs - Gate-Source Voltage	10 V
Technology	Si
Configuration	Single
Number of Channels	1 Channel
Qg - Gate Charge	5 nC
Transistor Polarity	N-Channel
Maximum Operating Temperature	+ 150 C
Minimum Operating Temperature	- 55 C
Channel Mode	Enhancement
Rds On - Drain-Source Resistance	120 mOhms
Vds - Drain-Source Breakdown Voltage	30 V
Packaging	Cut Tape, MouseReel, Reel