ZXMN3AMCTA

MOSFETs 30V DUAL N-CH ENH 20V VGS 3.7 IDS

SKU: ZXMN3AMCTA

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MOSFETs 30V DUAL N-CH ENH 20V VGS 3.7 IDS

Products specifications

Configuration	Dual
Id - Continuous Drain Current	3.7 A
Vds - Drain-Source Breakdown Voltage	30 V
Number of Channels	2 Channel
Rds On - Drain-Source Resistance	120 mOhms
Maximum Operating Temperature	+ 150 C
Channel Mode	Enhancement
Minimum Operating Temperature	- 55 C
Vgs - Gate-Source Voltage	20 V
Pd - Power Dissipation	2.45 W
Technology	Si
Transistor Polarity	N-Channel
Qg - Gate Charge	3.9 nC
Packaging	Cut Tape, MouseReel, Reel

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Products specifications

Configuration	Dual
Id - Continuous Drain Current	3.7 A
Vds - Drain-Source Breakdown Voltage	30 V
Number of Channels	2 Channel
Rds On - Drain-Source Resistance	120 mOhms
Maximum Operating Temperature	+ 150 C
Channel Mode	Enhancement
Minimum Operating Temperature	- 55 C
Vgs - Gate-Source Voltage	20 V
Pd - Power Dissipation	2.45 W
Technology	Si
Transistor Polarity	N-Channel
Qg - Gate Charge	3.9 nC
Packaging	Cut Tape, MouseReel, Reel