MOSFETs 40V N-Chnl UMOS
Lead Time: 84 Days
Products specifications
| Qg - Gate Charge | 18.2 nC |
| Rds On - Drain-Source Resistance | 50 mOhms |
| Channel Mode | Enhancement |
| Transistor Polarity | N-Channel |
| Number of Channels | 1 Channel |
| Technology | Si |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Vds - Drain-Source Breakdown Voltage | 40 V |
| Configuration | Single |
| Packaging | Cut Tape, MouseReel, Reel |
| Vgs - Gate-Source Voltage | 10 V |
| Pd - Power Dissipation | 3.9 W |
| Id - Continuous Drain Current | 7 A |
| Vgs th - Gate-Source Threshold Voltage | 1 V |