MOSFETs 60V N-Chnl UMOS
Lead Time: 168 Days
Products specifications
| Pd - Power Dissipation | 2.6 W |
| Vgs - Gate-Source Voltage | 10 V |
| Configuration | Single |
| Id - Continuous Drain Current | 2.5 A |
| Qg - Gate Charge | 3.2 nC |
| Number of Channels | 1 Channel |
| Vgs th - Gate-Source Threshold Voltage | 1 V |
| Transistor Polarity | N-Channel |
| Packaging | Cut Tape, MouseReel, Reel |
| Vds - Drain-Source Breakdown Voltage | 60 V |
| Channel Mode | Enhancement |
| Rds On - Drain-Source Resistance | 250 mOhms |
| Technology | Si |