MOSFETs P-Chan 100V MOSFET (UMOS)
Lead Time: 84 Days
Products specifications
| Id - Continuous Drain Current | 4.6 A |
| Qg - Gate Charge | 16.5 nC |
| Vgs - Gate-Source Voltage | 10 V |
| Minimum Operating Temperature | - 55 C |
| Packaging | Cut Tape, MouseReel, Reel |
| Rds On - Drain-Source Resistance | 235 mOhms |
| Technology | Si |
| Number of Channels | 1 Channel |
| Pd - Power Dissipation | 9.76 W |
| Vgs th - Gate-Source Threshold Voltage | 2 V |
| Configuration | Single |
| Vds - Drain-Source Breakdown Voltage | 100 V |
| Transistor Polarity | P-Channel |
| Channel Mode | Enhancement |
| Maximum Operating Temperature | + 150 C |