MOSFET 200V 200mA P-Channel Enhancement MOSFET
Products specifications
| Vgs - Gate-Source Voltage | 20 V |
| Vds - Drain-Source Breakdown Voltage | 200 V |
| Configuration | Single |
| Pd - Power Dissipation | 2 W |
| Id - Continuous Drain Current | 200 mA |
| Rds On - Drain-Source Resistance | 25 Ohms |
| Packaging | Cut Tape, MouseReel, Reel |
| Technology | Si |
| Transistor Polarity | P-Channel |
| Number of Channels | 1 Channel |
| Channel Mode | Enhancement |
| Maximum Operating Temperature | + 150 C |
| Minimum Operating Temperature | - 55 C |