MOSFET MOSFET,P-CHANNEL 60V, -3.4A/-2.8A
Products specifications
| Configuration | Single |
| Vgs th - Gate-Source Threshold Voltage | 1 V |
| Technology | Si |
| Number of Channels | 1 Channel |
| Transistor Polarity | P-Channel |
| Id - Continuous Drain Current | 2.7 A |
| Pd - Power Dissipation | 1.56 W |
| Packaging | Cut Tape, MouseReel, Reel |
| Rds On - Drain-Source Resistance | 125 mOhms |
| Vgs - Gate-Source Voltage | 20 V |
| Maximum Operating Temperature | + 150 C |
| Minimum Operating Temperature | - 55 C |
| Qg - Gate Charge | 9 nC |
| Vds - Drain-Source Breakdown Voltage | 60 V |