MOSFETs 60V Dual N-Ch Mosfet 100mOhm 2.8A 210mJ
Lead Time: 84 Days
Products specifications
| Vgs - Gate-Source Voltage | 5 V |
| Vds - Drain-Source Breakdown Voltage | 60 V |
| Id - Continuous Drain Current | 2.8 A |
| Transistor Polarity | N-Channel |
| Technology | Si |
| Tradename | IntelliFET |
| Packaging | Cut Tape, MouseReel, Reel |
| Vgs th - Gate-Source Threshold Voltage | 700 mV |
| Pd - Power Dissipation | 2.13 W |
| Configuration | Dual |
| Minimum Operating Temperature | - 40 C |
| Maximum Operating Temperature | + 125 C |
| Channel Mode | Enhancement |
| Rds On - Drain-Source Resistance | 75 mOhms, 75 mOhms |
| Number of Channels | 2 Channel |