IGBT Modules 600V 100A Dual
Products specifications
| Packaging | Bulk |
| Configuration | Dual |
| Minimum Operating Temperature | - 40 C |
| Gate-Emitter Leakage Current | 400 nA |
| Product | IGBT Silicon Modules |
| Collector- Emitter Voltage VCEO Max | 600 V |
| Pd - Power Dissipation | 330 W |
| Collector-Emitter Saturation Voltage | 1.45 V |
| Maximum Operating Temperature | + 150 C |
| Continuous Collector Current at 25 C | 125 A |