IGBT Modules 600V 150A Dual
Products specifications
| Collector-Emitter Saturation Voltage | 1.45 V |
| Product | IGBT Silicon Modules |
| Gate-Emitter Leakage Current | 400 nA |
| Minimum Operating Temperature | - 40 C |
| Pd - Power Dissipation | 500 W |
| Configuration | Dual |
| Maximum Operating Temperature | + 150 C |
| Packaging | Bulk |
| Continuous Collector Current at 25 C | 225 A |
| Collector- Emitter Voltage VCEO Max | 600 V |