IGBT Modules 600V 400A Dual 150TVj
Products specifications
| Configuration | Dual |
| Collector- Emitter Voltage VCEO Max | 600 V |
| Continuous Collector Current at 25 C | 400 A |
| Maximum Operating Temperature | + 150 C |
| Gate-Emitter Leakage Current | 1.2 uA |
| Pd - Power Dissipation | 1400 W |
| Minimum Operating Temperature | - 40 C |
| Collector-Emitter Saturation Voltage | 1.95 V |
| Packaging | Bulk |
| Product | IGBT Silicon Modules |