IGBT Modules 1200V 40A IGBT
Products specifications
| Collector- Emitter Voltage VCEO Max | 1200 V |
| Packaging | Bulk |
| Maximum Operating Temperature | + 125 C |
| Pd - Power Dissipation | 195 W |
| Collector-Emitter Saturation Voltage | 2.05 V |
| Product | IGBT Silicon Modules |
| Continuous Collector Current at 25 C | 55 A |
| Gate-Emitter Leakage Current | 400 nA |
| Configuration | 3-Phase Converter Brake Inverter |
| Minimum Operating Temperature | - 40 C |