IGBT Modules 1200V 75A Dual
Products specifications
| Configuration | Dual |
| Gate-Emitter Leakage Current | 100 nA |
| Pd - Power Dissipation | 630 W |
| Packaging | Bulk |
| Maximum Operating Temperature | + 150 C |
| Continuous Collector Current at 25 C | 105 A |
| Collector-Emitter Saturation Voltage | 1.8 V |
| Collector- Emitter Voltage VCEO Max | 1200 V |
| Product | IGBT Silicon Modules |
| Minimum Operating Temperature | - 40 C |