IGBT Modules 1700V 150A IGBT
Products specifications
| Configuration | Half Bridge |
| Minimum Operating Temperature | - 40 C |
| Gate-Emitter Leakage Current | 400 nA |
| Product | IGBT Silicon Modules |
| Pd - Power Dissipation | 890 W |
| Collector-Emitter Saturation Voltage | 2 V |
| Packaging | Bulk |
| Maximum Operating Temperature | + 125 C |
| Continuous Collector Current at 25 C | 250 A |
| Collector- Emitter Voltage VCEO Max | 1700 V |