IGBT Modules 1700V 50A IGBT
Products specifications
| Collector-Emitter Saturation Voltage | 2 V |
| Minimum Operating Temperature | - 40 C |
| Gate-Emitter Leakage Current | 400 nA |
| Continuous Collector Current at 25 C | 75 A |
| Pd - Power Dissipation | 320 W |
| Collector- Emitter Voltage VCEO Max | 1700 V |
| Maximum Operating Temperature | + 125 C |
| Product | IGBT Silicon Modules |
| Configuration | Half Bridge |
| Packaging | Bulk |