MOSFETs THERMAL. ENHANCED COMP. 200V N & P CH. MOSFET PAIR
Products specifications
| Maximum Operating Temperature | + 150 C |
| Technology | Si |
| Pd - Power Dissipation | - |
| Vds - Drain-Source Breakdown Voltage | 200 V |
| Number of Channels | 2 Channel |
| Channel Mode | Enhancement |
| Qg - Gate Charge | - |
| Packaging | Cut Tape, Reel |
| Id - Continuous Drain Current | 2 A |
| Vgs th - Gate-Source Threshold Voltage | 1 V, 2.4 V |
| Rds On - Drain-Source Resistance | 7 Ohms, 8 Ohms |
| Vgs - Gate-Source Voltage | 10 V |
| Transistor Polarity | N-Channel, P-Channel |
| Minimum Operating Temperature | - 40 C |
| Configuration | Dual |