2N5551-T

Bipolar Transistors - BJT NPN 0.6A 160V
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SKU: 2N5551-T

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Bipolar Transistors - BJT NPN 0.6A 160V
Lead Time: 0 Days

Products specifications

Transistor Polarity	NPN
Mounting Style	Through Hole
Gain Bandwidth Product fT	100 MHz
Technology	Si
Maximum Operating Temperature	+ 150 C
Minimum Operating Temperature	- 55 C
Configuration	Single
Collector- Emitter Voltage VCEO Max	160 V
Emitter- Base Voltage VEBO	6 V
Collector-Emitter Saturation Voltage	0.2 V
Collector- Base Voltage VCBO	180 V

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Products specifications

Transistor Polarity	NPN
Mounting Style	Through Hole
Gain Bandwidth Product fT	100 MHz
Technology	Si
Maximum Operating Temperature	+ 150 C
Minimum Operating Temperature	- 55 C
Configuration	Single
Collector- Emitter Voltage VCEO Max	160 V
Emitter- Base Voltage VEBO	6 V
Collector-Emitter Saturation Voltage	0.2 V
Collector- Base Voltage VCBO	180 V