MOSFETs Dual N-Ch Matched Pr VGS=0.0V
Products specifications
| Transistor Polarity | N-Channel |
| Configuration | Dual |
| Channel Mode | Enhancement |
| Vgs - Gate-Source Voltage | 10.6 V |
| Rds On - Drain-Source Resistance | 14 Ohms |
| Technology | Si |
| Vds - Drain-Source Breakdown Voltage | 10 V |
| Maximum Operating Temperature | + 70 C |
| Tradename | EPAD |
| Id - Continuous Drain Current | 79 mA |
| Number of Channels | 2 Channel |
| Pd - Power Dissipation | 500 mW |
| Minimum Operating Temperature | 0 C |
| Vgs th - Gate-Source Threshold Voltage | 180 mV |
| Packaging | Tube |