MOSFETs Quad P-Channel EPAD Matched Pair
Products specifications
| Rds On - Drain-Source Resistance | 1 kOhms |
| Id - Continuous Drain Current | 2.07 mA |
| Qg - Gate Charge | - |
| Vds - Drain-Source Breakdown Voltage | 8 V |
| Pd - Power Dissipation | 500 mW |
| Technology | Si |
| Vgs - Gate-Source Voltage | 8 V |
| Transistor Polarity | P-Channel |
| Vgs th - Gate-Source Threshold Voltage | 20 mV |
| Number of Channels | 4 Channel |
| Configuration | Quad |
| Channel Mode | Enhancement |
| Minimum Operating Temperature | 0 C |
| Maximum Operating Temperature | + 70 C |