| Configuration | Single |
| Qg - Gate Charge | 7.5 nC |
| Packaging | Cut Tape, MouseReel, Reel |
| Number of Channels | 1 Channel |
| Vds - Drain-Source Breakdown Voltage | 20 V |
| Vgs - Gate-Source Voltage | 4.5 V |
| Id - Continuous Drain Current | 76 A |
| Pd - Power Dissipation | 69 W |
| Maximum Operating Temperature | + 125 C |
| Channel Mode | Enhancement |
| Minimum Operating Temperature | - 55 C |
| Tradename | NexFET |
| Transistor Polarity | P-Channel |
| Technology | Si |
| Vgs th - Gate-Source Threshold Voltage | 650 mV |
| Rds On - Drain-Source Resistance | 8.9 mOhms |