Bipolar Transistors - BJT Power BJT
Products specifications
| Configuration | Single |
| Collector-Emitter Saturation Voltage | 900 mV |
| Series | 2N2270 |
| Gain Bandwidth Product fT | 100 MHz |
| Emitter- Base Voltage VEBO | 7 V |
| Maximum DC Collector Current | 150 mA |
| Transistor Polarity | NPN |
| Mounting Style | Through Hole |
| Collector- Emitter Voltage VCEO Max | 45 V |
| Collector- Base Voltage VCBO | 60 V |