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Bipolar Transistors - BJT NPN 140Vcbo 80Vceo 7.0Vebo 1.8A 500mW

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Bipolar Transistors - BJT NPN 140Vcbo 80Vceo 7.0Vebo 1.8A 500mW

Products specifications

Collector- Emitter Voltage VCEO Max	80 V
Collector- Base Voltage VCBO	140 V
Technology	Si
Transistor Polarity	NPN
Gain Bandwidth Product fT	400 MHz
Mounting Style	Through Hole
Minimum Operating Temperature	- 65 C
Collector-Emitter Saturation Voltage	0.5 V
Maximum Operating Temperature	+ 200 C
Emitter- Base Voltage VEBO	7 V
Configuration	Single

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Products specifications

Collector- Emitter Voltage VCEO Max	80 V
Collector- Base Voltage VCBO	140 V
Technology	Si
Transistor Polarity	NPN
Gain Bandwidth Product fT	400 MHz
Mounting Style	Through Hole
Minimum Operating Temperature	- 65 C
Collector-Emitter Saturation Voltage	0.5 V
Maximum Operating Temperature	+ 200 C
Emitter- Base Voltage VEBO	7 V
Configuration	Single