2N3866A

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Bipolar Transistors - BJT PNP 55Vcbo 30Vceo 3.5Vebo 0.4A 5.0W

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Bipolar Transistors - BJT PNP 55Vcbo 30Vceo 3.5Vebo 0.4A 5.0W

Products specifications

Emitter- Base Voltage VEBO	3.5 V
Configuration	Single
Technology	Si
Series	2N3866A
Transistor Polarity	NPN
Collector-Emitter Saturation Voltage	1 V
Minimum Operating Temperature	- 65 C
Mounting Style	Through Hole
Maximum Operating Temperature	+ 200 C
Collector- Base Voltage VCBO	55 V
Collector- Emitter Voltage VCEO Max	30 V
Gain Bandwidth Product fT	800 MHz

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Products specifications

Emitter- Base Voltage VEBO	3.5 V
Configuration	Single
Technology	Si
Series	2N3866A
Transistor Polarity	NPN
Collector-Emitter Saturation Voltage	1 V
Minimum Operating Temperature	- 65 C
Mounting Style	Through Hole
Maximum Operating Temperature	+ 200 C
Collector- Base Voltage VCBO	55 V
Collector- Emitter Voltage VCEO Max	30 V
Gain Bandwidth Product fT	800 MHz