Bipolar Transistors - BJT NPN 50Vceo 50Vcbo 4.5Vebo 50mA 350mW
Products specifications
| Maximum DC Collector Current | 50 mA |
| Emitter- Base Voltage VEBO | 4.5 V |
| Collector-Emitter Saturation Voltage | 700 mV |
| Collector- Emitter Voltage VCEO Max | 50 V |
| Configuration | Single |
| Mounting Style | Through Hole |
| Collector- Base Voltage VCBO | 50 V |
| Series | 2N5210 |
| Maximum Operating Temperature | + 150 C |
| Transistor Polarity | NPN |
| Gain Bandwidth Product fT | 30 MHz |