2N5859

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Bipolar Transistors - BJT 80Vcbo 40Vceo 6.0Vebo 2.0A 1.0W

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Bipolar Transistors - BJT 80Vcbo 40Vceo 6.0Vebo 2.0A 1.0W

Products specifications

Series	2N5859
Minimum Operating Temperature	- 65 C
Maximum Operating Temperature	+ 200 C
Transistor Polarity	NPN
Collector- Emitter Voltage VCEO Max	40 V
Emitter- Base Voltage VEBO	6 V
Collector-Emitter Saturation Voltage	0.7 V
Technology	Si
Configuration	Single
Mounting Style	Through Hole
Collector- Base Voltage VCBO	80 V
Gain Bandwidth Product fT	250 MHz

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Products specifications

Series	2N5859
Minimum Operating Temperature	- 65 C
Maximum Operating Temperature	+ 200 C
Transistor Polarity	NPN
Collector- Emitter Voltage VCEO Max	40 V
Emitter- Base Voltage VEBO	6 V
Collector-Emitter Saturation Voltage	0.7 V
Technology	Si
Configuration	Single
Mounting Style	Through Hole
Collector- Base Voltage VCBO	80 V
Gain Bandwidth Product fT	250 MHz