2N6468

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Bipolar Transistors - BJT PNP 130Vcbo 130Vcex 125Vcer 120Vceo 40W

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Bipolar Transistors - BJT PNP 130Vcbo 130Vcex 125Vcer 120Vceo 40W

Products specifications

Transistor Polarity	PNP
Technology	Si
Series	2N6468
Emitter- Base Voltage VEBO	5 V
Collector- Base Voltage VCBO	130 V
Maximum Operating Temperature	+ 200 C
Minimum Operating Temperature	- 65 C
Maximum DC Collector Current	-
Configuration	Single
Collector-Emitter Saturation Voltage	1.2 V, 4 V
Gain Bandwidth Product fT	5 MHz
Collector- Emitter Voltage VCEO Max	120 V
Mounting Style	Through Hole

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Products specifications

Transistor Polarity	PNP
Technology	Si
Series	2N6468
Emitter- Base Voltage VEBO	5 V
Collector- Base Voltage VCBO	130 V
Maximum Operating Temperature	+ 200 C
Minimum Operating Temperature	- 65 C
Maximum DC Collector Current	-
Configuration	Single
Collector-Emitter Saturation Voltage	1.2 V, 4 V
Gain Bandwidth Product fT	5 MHz
Collector- Emitter Voltage VCEO Max	120 V
Mounting Style	Through Hole