Bipolar Transistors - BJT Power BJT
Products specifications
| Collector- Base Voltage VCBO | 160 V |
| Technology | Si |
| Gain Bandwidth Product fT | 4 MHz |
| Transistor Polarity | PNP |
| Collector- Emitter Voltage VCEO Max | 140 V |
| Maximum Operating Temperature | + 200 C |
| Series | 2N6609 |
| Collector-Emitter Saturation Voltage | 1.4 V |
| Mounting Style | Through Hole |
| Emitter- Base Voltage VEBO | 7 V |
| Minimum Operating Temperature | - 65 C |