MOSFETs N-Ch 60Vds 60Vdg 40Vgs 350mW
Lead Time: 10 Days
Products specifications
| Minimum Operating Temperature | - 65 C |
| Configuration | Single |
| Vds - Drain-Source Breakdown Voltage | 60 V |
| Vgs - Gate-Source Voltage | 40 V |
| Technology | Si |
| Vgs th - Gate-Source Threshold Voltage | 2.1 V |
| Pd - Power Dissipation | 350 mW |
| Qg - Gate Charge | 592 pC |
| Id - Continuous Drain Current | 115 mA |
| Packaging | Reel |
| Channel Mode | Enhancement |
| Maximum Operating Temperature | + 150 C |
| Rds On - Drain-Source Resistance | 7.5 Ohms |
| Transistor Polarity | N-Channel |
| Number of Channels | 1 Channel |