Bipolar Transistors - BJT PNP 32Vcbo 5.0Vebo 100mA 340mW 1W
Products specifications
| Configuration | Single |
| Emitter- Base Voltage VEBO | 5 V |
| Collector-Emitter Saturation Voltage | 0.8 V |
| Transistor Polarity | PNP |
| Collector- Emitter Voltage VCEO Max | 32 V |
| Gain Bandwidth Product fT | 100 MHz |
| Maximum Operating Temperature | + 200 C |
| Collector- Base Voltage VCBO | 32 V |
| Maximum DC Collector Current | 200 mA |
| Minimum Operating Temperature | - 65 C |
| Mounting Style | Through Hole |
| Technology | Si |