BSX63-10

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Bipolar Transistors - BJT NPN 80Vcbo 60Vceo 5.0Vebo 3.0A 5.0W

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Bipolar Transistors - BJT NPN 80Vcbo 60Vceo 5.0Vebo 3.0A 5.0W

Products specifications

Collector- Base Voltage VCBO	80 V
Technology	Si
Maximum DC Collector Current	3 A
Collector-Emitter Saturation Voltage	0.8 V
Maximum Operating Temperature	+ 200 C
Mounting Style	Through Hole
Emitter- Base Voltage VEBO	5 V
Minimum Operating Temperature	- 65 C
Configuration	Single
Collector- Emitter Voltage VCEO Max	60 V
Transistor Polarity	NPN
Gain Bandwidth Product fT	30 MHz

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Products specifications

Collector- Base Voltage VCBO	80 V
Technology	Si
Maximum DC Collector Current	3 A
Collector-Emitter Saturation Voltage	0.8 V
Maximum Operating Temperature	+ 200 C
Mounting Style	Through Hole
Emitter- Base Voltage VEBO	5 V
Minimum Operating Temperature	- 65 C
Configuration	Single
Collector- Emitter Voltage VCEO Max	60 V
Transistor Polarity	NPN
Gain Bandwidth Product fT	30 MHz