JFETs P-Ch 30Vgd JFET 30Vgs 50mA 225mW
Lead Time: 10 Days
Products specifications
| Technology | Si |
| Vgs - Gate-Source Breakdown Voltage | 30 V |
| Maximum Operating Temperature | + 150 C |
| Rds On - Drain-Source Resistance | 125 Ohms |
| Pd - Power Dissipation | 350 mW |
| Transistor Polarity | P-Channel |
| Packaging | Reel |
| Series | CMPFJ175 |
| Minimum Operating Temperature | - 65 C |
| Configuration | Single |
| Vds - Drain-Source Breakdown Voltage | 15 V |