PMD10K100

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Bipolar Transistors - BJT NPN 100Vcbo 100Vceo 5.0Vebo 12A 150W

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Bipolar Transistors - BJT NPN 100Vcbo 100Vceo 5.0Vebo 12A 150W

Products specifications

Minimum Operating Temperature	- 65 C
Technology	Si
Mounting Style	Through Hole
Collector- Base Voltage VCBO	100 V
Series	PMD10K100
Gain Bandwidth Product fT	4 MHz
Maximum Operating Temperature	+ 200 C
Transistor Polarity	NPN
Configuration	Single
Collector- Emitter Voltage VCEO Max	100 V
Collector-Emitter Saturation Voltage	2 V
Emitter- Base Voltage VEBO	5 V
Maximum DC Collector Current	20 A

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Products specifications

Minimum Operating Temperature	- 65 C
Technology	Si
Mounting Style	Through Hole
Collector- Base Voltage VCBO	100 V
Series	PMD10K100
Gain Bandwidth Product fT	4 MHz
Maximum Operating Temperature	+ 200 C
Transistor Polarity	NPN
Configuration	Single
Collector- Emitter Voltage VCEO Max	100 V
Collector-Emitter Saturation Voltage	2 V
Emitter- Base Voltage VEBO	5 V
Maximum DC Collector Current	20 A