Bipolar Transistors - BJT 1000W -32Vceo
Lead Time: 56 Days
Products specifications
Collector-Emitter Saturation Voltage | 800 mV |
Transistor Polarity | PNP |
Gain Bandwidth Product fT | 120 MHz |
Collector- Emitter Voltage VCEO Max | 32 V |
Configuration | Single |
Maximum DC Collector Current | 2 A |
Series | 2DB11 |
Minimum Operating Temperature | - 55 C |
Emitter- Base Voltage VEBO | 6 V |
Maximum Operating Temperature | + 150 C |
Collector- Base Voltage VCBO | 40 V |