2DB1188R-13

Bipolar Transistors - BJT 1000W -32Vceo
Lead Time: 168 Days

SKU: 2DB1188R-13

Availability: 2427 in stock

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R 16.94

R 10.43

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R 4.56

R 3.59

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Bipolar Transistors - BJT 1000W -32Vceo
Lead Time: 168 Days

Products specifications

Collector-Emitter Saturation Voltage	800 mV
Transistor Polarity	PNP
Gain Bandwidth Product fT	120 MHz
Collector- Emitter Voltage VCEO Max	32 V
Configuration	Single
Maximum DC Collector Current	2 A
Series	2DB11
Minimum Operating Temperature	- 55 C
Emitter- Base Voltage VEBO	6 V
Maximum Operating Temperature	+ 150 C
Collector- Base Voltage VCBO	40 V

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Products specifications

Collector-Emitter Saturation Voltage	800 mV
Transistor Polarity	PNP
Gain Bandwidth Product fT	120 MHz
Collector- Emitter Voltage VCEO Max	32 V
Configuration	Single
Maximum DC Collector Current	2 A
Series	2DB11
Minimum Operating Temperature	- 55 C
Emitter- Base Voltage VEBO	6 V
Maximum Operating Temperature	+ 150 C
Collector- Base Voltage VCBO	40 V