2DD1766P-13

Bipolar Transistors - BJT 1000W 32Vceo

SKU: 2DD1766P-13

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R 10.79

R 9.23

R 6.90

R 5.38

R 4.18

R 3.77

R 3.56

R 3.33

R 3.23

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Bipolar Transistors - BJT 1000W 32Vceo

Products specifications

Collector- Base Voltage VCBO	40 V
Collector-Emitter Saturation Voltage	800 mV
Maximum Operating Temperature	+ 150 C
Emitter- Base Voltage VEBO	5 V
Minimum Operating Temperature	- 55 C
Maximum DC Collector Current	2 A
Series	2DD17
Gain Bandwidth Product fT	220 MHz
Configuration	Single
Collector- Emitter Voltage VCEO Max	32 V
Transistor Polarity	NPN

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Products specifications

Collector- Base Voltage VCBO	40 V
Collector-Emitter Saturation Voltage	800 mV
Maximum Operating Temperature	+ 150 C
Emitter- Base Voltage VEBO	5 V
Minimum Operating Temperature	- 55 C
Maximum DC Collector Current	2 A
Series	2DD17
Gain Bandwidth Product fT	220 MHz
Configuration	Single
Collector- Emitter Voltage VCEO Max	32 V
Transistor Polarity	NPN