MOSFETs 60V N-Ch Enh FET 7.5Ohm 5Vgs 210mA
Lead Time: 84 Days
Products specifications
| Qg - Gate Charge | 352 pC |
| Packaging | Cut Tape, MouseReel, Reel |
| Channel Mode | Enhancement |
| Vgs th - Gate-Source Threshold Voltage | 2 V |
| Technology | Si |
| Configuration | Single |
| Pd - Power Dissipation | 510 mW |
| Id - Continuous Drain Current | 210 mA |
| Minimum Operating Temperature | - 55 C |
| Vgs - Gate-Source Voltage | 5 V |
| Maximum Operating Temperature | + 150 C |
| Rds On - Drain-Source Resistance | 7.5 Ohms |
| Vds - Drain-Source Breakdown Voltage | 60 V |
| Transistor Polarity | N-Channel |
| Number of Channels | 1 Channel |