Bipolar Transistors - BJT General Purpose Transistor
Products specifications
| Collector-Emitter Saturation Voltage | 0.9 V |
| Gain Bandwidth Product fT | 100 MHz |
| Configuration | Single |
| Transistor Polarity | NPN |
| Emitter- Base Voltage VEBO | 5 V |
| Collector- Emitter Voltage VCEO Max | 125 V |
| Maximum DC Collector Current | 800 mA |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |