MOSFETs P-Ch ENH FET -30V 65mOhm -20V -3.8A
Lead Time: 168 Days
Products specifications
| Packaging | Cut Tape, MouseReel, Reel |
| Transistor Polarity | P-Channel |
| Pd - Power Dissipation | 1.08 W |
| Qg - Gate Charge | 11 nC |
| Configuration | Single |
| Rds On - Drain-Source Resistance | 65 mOhms |
| Vgs th - Gate-Source Threshold Voltage | 1 V |
| Id - Continuous Drain Current | 3.8 A |
| Technology | Si |
| Number of Channels | 1 Channel |
| Channel Mode | Enhancement |
| Vgs - Gate-Source Voltage | 10 V |
| Vds - Drain-Source Breakdown Voltage | 30 V |
| Maximum Operating Temperature | + 150 C |
| Minimum Operating Temperature | - 55 C |