DRDN005W-7

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Bipolar Transistors - BJT NPN Trans/Switch Diode-Relay Drvr

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Bipolar Transistors - BJT NPN Trans/Switch Diode-Relay Drvr

Products specifications

Collector- Base Voltage VCBO	80 V
Collector-Emitter Saturation Voltage	250 mV
Maximum DC Collector Current	500 mA
Emitter- Base Voltage VEBO	4 V
Series	DRDN005
Transistor Polarity	NPN
Configuration	Single
Minimum Operating Temperature	- 55 C
Collector- Emitter Voltage VCEO Max	80 V
Gain Bandwidth Product fT	100 MHz
Maximum Operating Temperature	+ 150 C

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Products specifications

Collector- Base Voltage VCBO	80 V
Collector-Emitter Saturation Voltage	250 mV
Maximum DC Collector Current	500 mA
Emitter- Base Voltage VEBO	4 V
Series	DRDN005
Transistor Polarity	NPN
Configuration	Single
Minimum Operating Temperature	- 55 C
Collector- Emitter Voltage VCEO Max	80 V
Gain Bandwidth Product fT	100 MHz
Maximum Operating Temperature	+ 150 C