Bipolar Transistors - BJT Pwr Mid Perf Transistor
Products specifications
| Configuration | Single |
| Gain Bandwidth Product fT | 175 MHz |
| Minimum Operating Temperature | - 55 C |
| Collector-Emitter Saturation Voltage | 150 mV |
| Emitter- Base Voltage VEBO | 7 V |
| Collector- Emitter Voltage VCEO Max | 100 V |
| Maximum Operating Temperature | + 175 C |
| Collector- Base Voltage VCBO | 120 V |
| Transistor Polarity | NPN |
| Maximum DC Collector Current | 2 A |
| Technology | Si |